, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 features ? 4.0a and 5.0a, 150v and 200v ? rds(on) = 0.8n and 1.2i ? soa is power dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance ? majority carrier device description these are n-channel enhancement mode silicon gate power field effect transistors. they are advanced power mosfets designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. all of these power mosfets are designed for applications such as switching regulators, switching conver- ters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. these types can be operated directly from integrated circuits. ordering information symbol 9 d part number IRF220 irf221 irf222 irf223 package to-204aa to-204aa to-204aa to-204aa brand IRF220 irf221 irf222 irf223 note: when ordering, use the entire part number. packaging jedecto-204aa drain (flange) gate (pin 1) source (pin 2) nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
absolute maximum ratings tc = 25c, unless otn drain to source voltage (note 1 ) .... vnIRF220 200 200 5.0 3.0 20 20 40 0.32 85 -55 to 150 300 260 irf221 150 150 5.0 3.0 20 20 40 0.32 85 -55 to 150 300 260 irf222 200 200 4.0 2.5 16 20 40 0.32 85 -55 to 150 300 260 irf223 150 150 4.0 2.5 16 20 40 0.32 85 -55 to 150 300 260 units v v a a a v w w/c mj c c c caution: stresses above those listed in "absolute maximum ratings" may cause permanent damage to the device. this is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. note: = 25cto125c. electrical specifications tc = 25c, unless otherwise specified parameter drain to source breakdown voltage IRF220, irf222 irf221.irf223 gate threshold voltage zero gate voltage drain current on-state drain current (note 2) IRF220, irf221 irf222, irf223 gate to source leakage current drain to source on resistance (note 2) IRF220, irf221 irf222, irf223 forward transconductance (note 2) turn-on delay time rise time turn-off delay time fall time total gate charge (gate to source + gate to drain) gate to source charge gate to drain "miller" charge symbol bvdss vgs(th) toss 'd(on) 'gss rds(on) 9fs 'd(on) tr td(off) tf q9(tot) qgs qgd test conditions id = 250ua, vgs = ov, (figure 10) vds = vgs. id = 2^a vds = rated bvdss, vgs = ov vds = 0-8 x rated bvdss, vgs = ov, tj = 125c vds > ld(on) x rds(on)max. vgs = 10v vgs = 2ov id = 2.5a, vgs = 1v, (figure 8) vds > !d(on) x rds(on)max. ]d = 2.5a vdd = 0.5 x rated bvdss, id = 2.5a, rg = 50i for IRF220, 222 rl = 80i for irf221. 223 rl = 6011 (figures 17, 18) mosfet switching times are essentially independent of operating temperature vgs = 1v, id = 6-oa. vds = -8 x rated bvdss ig(ref) = 1.5ma, (figures 14, 19, 20) gate charge is essentially independent of operating temperature win 200 150 2.0 - - 5.0 4.0 - - - 1.3 - - - - - - - typ _ - - - - - - - 0.5 0.8 2.5 20 30 50 30 11 5.0 6.0 max - 4.0 25 250 _ - 100 0.8 1.2 - 40 60 100 60 15 - - units v v v ua ua a a na n 1 s ns ns ns ns nc nc nc
electrical specifications tc = 25c. unless otherwise specified (continued) parameter input capacitance output capacitance reverse transfer capacitance internal drain inductance internal source inductance thermal resistance junction to case thermal resistance junction to ambient symbol ciss coss crss ld ls rbjc r6ja test conditions vds = 25v, vgs = ov, f=1mhz (figure 11) measured between the contact screw on the flange that is closer to source and gate pins and the center of die measured from the source lead, 6mm (0.25in) from the flange and the source bonding pad modified mosfet symbol showing the internal device inductances free air operation min - - - - - typ 450 150 40 5.0 12.5 - - max - - - 3.12 30 units pf pf pf nh nh c/w c/w source to drain diode specifications parameter continuous source to drain current IRF220, irf221 irf222, irf223 pulse source to drain current (note 3) IRF220, irf221 irf222, irf223 source to drain diode voltage (note 2) IRF220, irf221 irf222, irf223 reverse recovery time reverse recovery charge symbol isd !sdm vsd trr qrr test conditions modified mosfet symbol showing the integral reverse p-n junction rectifier < b s tc = 25c, isd = 5.0a, vgs = 0v, (figure 13) tc = 25c, isd = 4.0a, vgs = ov. (figure 13) tj = 150c, isd = 5.0a, dlsd/dt = 100a/us tj = 150c, isd = 5.0a, dlso/dt = 100a/us min _ - . - - - - - typ - - . - - - 350 2.3 max 5.0 4.0 20 16 2.0 1.8 - - units a a a a v v ns nc
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